

Vortex®-EM · 1EA/ PACK
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Description
Vortex-EM silicon drift X-ray detectors feature active areas between 30 mm2 and 80 mm2. Vortex-EM detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (<130 eV FWHM at Mn K is typical) and a high count rate capability. At 0.1 s PT with an output count rate of 900 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate.







